发明授权
- 专利标题： Method of making deep junction for electrical crosstalk reduction of an image sensor
- 专利标题（中）： 制造图像传感器电气串扰降低深度方法
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申请号： US12845496申请日： 2010-07-28
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公开(公告)号： US07994032B2公开(公告)日： 2011-08-09
- 发明人: Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
- 申请人： Shang-Yi Chiang , Chung Wang , Shou-Gwo Wuu , Dun-Nian Yaung
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/38
- IPC分类号： H01L21/38
摘要：
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
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