Invention Grant
- Patent Title: Optical device including gate insulator with modulated thickness
- Patent Title (中): 光学器件包括调制厚度的栅极绝缘体
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Application No.: US12375343Application Date: 2007-04-24
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Publication No.: US07994549B2Publication Date: 2011-08-09
- Inventor: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
- Applicant: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
- Applicant Address: KR Daejeon
- Assignee: Electronics & Telecomunications Research Institute
- Current Assignee: Electronics & Telecomunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2006-0071656 20060728
- International Application: PCT/KR2007/002003 WO 20070424
- International Announcement: WO2008/013358 WO 20080131
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
Public/Granted literature
- US20090237770A1 OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS Public/Granted day:2009-09-24
Information query
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