Invention Grant
- Patent Title: Test device and semiconductor integrated circuit device
- Patent Title (中): 测试器件和半导体集成电路器件
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Application No.: US12385117Application Date: 2009-03-31
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Publication No.: US07994811B2Publication Date: 2011-08-09
- Inventor: Sang-Jin Lee , Gin-Kyu Lee
- Applicant: Sang-Jin Lee , Gin-Kyu Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0069541 20080717
- Main IPC: G01R31/02
- IPC: G01R31/02

Abstract:
Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
Public/Granted literature
- US20100013513A1 Test device and semiconductor integrated circuit device Public/Granted day:2010-01-21
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