发明授权
- 专利标题： Reducing effects of program disturb in a memory device
- 专利标题（中）： 减少存储器件中程序干扰的影响
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申请号： US12619862申请日： 2009-11-17
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公开(公告)号： US07995400B2公开(公告)日： 2011-08-09
- 发明人: Vishal Sarin
- 申请人： Vishal Sarin
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
The programming disturb effects in a semiconductor non-volatile memory device are reduced by biasing unselected word lines of a memory block with a negative voltage followed by a positive Vpass voltage. The selected word lines are biased with a programming voltage. In one embodiment, the programming voltage is preceded by a negative voltage.
公开/授权文献
- US20100061147A1 REDUCING EFFECTS OF PROGRAM DISTURB IN A MEMORY DEVICE 公开/授权日：2010-03-11
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