发明授权
- 专利标题: Analog-to-digital and digital-to-analog conversion window adjustment based on reference cells in a memory device
- 专利标题(中): 基于存储器件中的参考单元的模数和数模转换窗口调整
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申请号: US11851649申请日: 2007-09-07
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公开(公告)号: US07995412B2公开(公告)日: 2011-08-09
- 发明人: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- 申请人: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert Jay & Polglaze, P.A.
- 主分类号: G11C7/02
- IPC分类号: G11C7/02
摘要:
An analog-to-digital conversion window is defined by reference voltages stored in reference memory cells of a memory device. A first reference voltage is read to define an upper limit of the conversion window and a second reference voltage is read to define a lower limit of the conversion window. An analog voltage representing a digital bit pattern is read from a memory cell and converted to the digital bit pattern by an analog-to-digital conversion process using the conversion window as the limits for the sampling process. This scheme helps in real time tracking of the ADC window with changes in the program window of the memory array.
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