发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12469778申请日: 2009-05-21
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公开(公告)号: US07996735B2公开(公告)日: 2011-08-09
- 发明人: Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- 申请人: Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2008-220785 20080829
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.
公开/授权文献
- US20100058127A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-03-04
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