发明授权
US08000129B2 Field-emitter-based memory array with phase-change storage devices
有权
具有相变存储设备的基于场发射器的存储器阵列
- 专利标题： Field-emitter-based memory array with phase-change storage devices
- 专利标题（中）： 具有相变存储设备的基于场发射器的存储器阵列
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申请号： US12339696申请日： 2008-12-19
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公开(公告)号： US08000129B2公开(公告)日： 2011-08-16
- 发明人: Daniel R. Shepard
- 申请人： Daniel R. Shepard
- 申请人地址： US MA N. Billerica
- 专利权人： Contour Semiconductor, Inc.
- 当前专利权人： Contour Semiconductor, Inc.
- 当前专利权人地址： US MA N. Billerica
- 代理机构： Bingham McCutchen LLP
- 主分类号： G11C13/00
- IPC分类号： G11C13/00
摘要：
Embodiments of the present invention include systems and methods for three-terminal field-emitter triode devices, and memory arrays utilizing the same. In other embodiments, the field-emitter devices include a volume-change material, capable of changing a measurable electrical property of the devices, and/or three-dimensional memory arrays of the same.
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