Invention Grant
US08002945B2 Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
有权
通过不匹配的低功率RF发生器的同步调制，设计瞬变的等离子体负载阻抗调谐方法
- Patent Title: Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
- Patent Title (中): 通过不匹配的低功率RF发生器的同步调制，设计瞬变的等离子体负载阻抗调谐方法
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Application No.: US12129024Application Date: 2008-05-29
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Publication No.: US08002945B2Publication Date: 2011-08-23
- Inventor: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: C23F1/00
- IPC: C23F1/00
Abstract:
A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
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