发明授权
- 专利标题: Strained semiconductor device and method of making the same
- 专利标题(中): 应变半导体器件及其制造方法
-
申请号: US11224825申请日: 2005-09-13
-
公开(公告)号: US08003470B2公开(公告)日: 2011-08-23
- 发明人: Helmut Horst Tews , Andre Schenk
- 申请人: Helmut Horst Tews , Andre Schenk
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
In a method for forming a semiconductor device, a gate electrode is formed over a semiconductor body (e.g., bulk silicon substrate or SOI layer). The gate electrode is electrically insulated from the semiconductor body. A first sidewall spacer is formed along a sidewall of the gate electrode. A sacrificial sidewall spacer is formed adjacent the first sidewall spacer. The sacrificial sidewall spacer and the first sidewall spacer overlying the semiconductor body. A planarization layer is formed over the semiconductor body such that a portion of the planarization layer is adjacent the sacrificial sidewall spacer. The sacrificial sidewall spacer can then be removed and a recess etched in the semiconductor body. The recess is substantially aligned between the first sidewall spacer and the portion of the planarization layer. A semiconductor material (e.g., SiGe or SiC) can then be formed in the recess.