发明授权
- 专利标题： Diluted magnetic semiconductor nanowires exhibiting magnetoresistance
- 专利标题（中）： 显示磁阻的稀释磁半导体纳米线
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申请号： US11480280申请日： 2006-06-29
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公开(公告)号： US08003497B2公开(公告)日： 2011-08-23
- 发明人: Peidong Yang , Heonjin Choi , Sangkwon Lee , Rongrui He , Yanfeng Zhang , Tevye Kuykendal , Peter Pauzauskie
- 申请人： Peidong Yang , Heonjin Choi , Sangkwon Lee , Rongrui He , Yanfeng Zhang , Tevye Kuykendal , Peter Pauzauskie
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理商 John P. O'Banion
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ˜10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
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