Invention Grant
- Patent Title: Particle beam assisted modification of thin film materials
- Patent Title (中): 粒子束辅助修饰薄膜材料
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Application No.: US12269344Application Date: 2008-11-12
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Publication No.: US08003498B2Publication Date: 2011-08-23
- Inventor: Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
- Applicant: Jonathan G. England , Frank Sinclair , John (Bon-Woong) Koo , Rajesh Dorai , Ludovic Godet
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.
Public/Granted literature
- US20090124066A1 PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS Public/Granted day:2009-05-14
Information query
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