发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12146946申请日： 2008-06-26
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公开(公告)号： US08003525B2公开(公告)日： 2011-08-23
- 发明人: Naoya Okamoto
- 申请人： Naoya Okamoto
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Fujitsu Patent Center
- 优先权： JP2007-172345 20070629; JP2008-034974 20080215
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.
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