发明授权
- 专利标题: Field effect transistor
- 专利标题(中): 场效应晶体管
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申请号: US12348404申请日: 2009-01-05
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公开(公告)号: US08004024B2公开(公告)日: 2011-08-23
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 Richard M. Kotulak
- 主分类号: H01L29/423
- IPC分类号: H01L29/423 ; H01L29/78
摘要:
A transistor. The transistor including: a well region in a substrate; a gate dielectric layer on a top surface of the well region; a polysilicon gate electrode on a top surface of the gate dielectric layer; spacers formed on opposite sidewalls of the polysilicon gate electrode; source/drain regions formed on opposite sides of the polysilicon gate electrode in the well region; a first doped region in the polysilicon gate electrode, the first doped region extending into the polysilicon gate electrode from a top surface of the polysilicon gate electrode; and a buried second doped region in the polysilicon gate electrode.
公开/授权文献
- US20090121298A1 FIELD EFFECT TRANSISTOR 公开/授权日:2009-05-14