发明授权
- 专利标题： Alignment key, method for fabricating the alignment key, and method for fabricating thin film transistor substrate using the alignment key
- 专利标题（中）： 对准键，用于制造对准键的方法以及使用对准键制造薄膜晶体管衬底的方法
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申请号： US12898492申请日： 2010-10-05
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公开(公告)号： US08004098B2公开(公告)日： 2011-08-23
- 发明人: Youn Gyoung Chang , Seung Hee Nam , Nam Kook Kim , Soon Sung Yoo
- 申请人： Youn Gyoung Chang , Seung Hee Nam , Nam Kook Kim , Soon Sung Yoo
- 申请人地址： KR Seoul
- 专利权人： LG Display Co., Ltd.
- 当前专利权人： LG Display Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Morgan, Lewis & Bockius LLP
- 优先权： KR10-2007-0063758 20070627
- 主分类号： H01L23/544
- IPC分类号： H01L23/544
摘要：
An alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key are provided. The alignment key includes a base substrate, a first alignment key and a first mark portion of a second alignment key, which are formed on the base substrate using a printing roll, a dielectric that is formed on the base substrate to cover the first alignment key, and a second mark portion of the second alignment key, which is formed on the dielectric and at least partly overlaps the first mark portion of the second alignment key.
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