Invention Grant
- Patent Title: Semiconductor memory device including FET memory elements
- Patent Title (中): 半导体存储器件包括FET存储元件
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Application No.: US12405799Application Date: 2009-03-17
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Publication No.: US08004871B2Publication Date: 2011-08-23
- Inventor: Yukihiro Kaneko , Yoshihisa Kato
- Applicant: Yukihiro Kaneko , Yoshihisa Kato
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-137240 20080526; JP2008-150276 20080609
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
A memory cell includes a memory element including a MFSFET having a gate insulating film made of a ferroelectric film, and a selection switching element including a MISFET having a gate insulating film made of a paraelectric film. A load element for a read operation is connected in series to the memory cell. The ferroelectric film and the paraelectric film are stacked with a semiconductor film being interposed therebetween. The semiconductor film forms a common channel shared by the MFSFET and the MISFET. The load element includes a MISFET having a channel made of the semiconductor film or a resistance element having a resistor made of the semiconductor film.
Public/Granted literature
- US20090290404A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-11-26
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