Invention Grant
US08004923B2 Semiconductor device including internal voltage generation circuit 失效
半导体器件包括内部电压产生电路

Semiconductor device including internal voltage generation circuit
Abstract:
A semiconductor integrated circuit device has a negative voltage generation circuit provided at each power supply circuit unit for six memory macros. Therefore, the response with respect to variation in a negative voltage is increased. In a standby mode, a negative voltage supply line for the six memory macros is connected by a switch circuit, and only a negative voltage generation circuit of one power supply circuit unit among six negative voltage generation circuits of the six power supply circuit units is rendered active. Thus, increase in standby current can be prevented.
Public/Granted literature
Information query
Patent Agency Ranking
0/0