发明授权
- 专利标题: Method for manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US12562837申请日: 2009-09-18
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公开(公告)号: US08006217B2公开(公告)日: 2011-08-23
- 发明人: Tomoaki Atsumi
- 申请人: Tomoaki Atsumi
- 申请人地址: JP Atsugi-shi, Kangawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kangawa-ken
- 代理机构: Husch Blackwell LLP
- 优先权: JP2008-243452 20080923
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
To reduce current consumption in a frequency-division circuit, particularly in a multistage frequency-division circuit, in a multistage frequency-division circuit, an inputted signal has a higher frequency in a preceding stage, and an inputted signal has a lower frequency in a following stage. Thus, placement is performed preferentially from the basic cell corresponding to the frequency-division circuit into which a signal having a higher frequency is inputted, and then wiring connection is performed. In other words, the layout of a plurality of basic cells corresponding to a multistage frequency-division circuit is performed so that, as compared to a wiring into which a signal having a lower frequency is inputted, a wiring into which a signal having a higher frequency is inputted has a shorter wiring length and has less intersection with other wirings, so that parasitic capacitance and parasitic resistance of the wiring are reduced.
公开/授权文献
- US20100071178A1 Method for Manufacturing Semiconductor Device 公开/授权日:2010-03-25
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