发明授权
- 专利标题： Methods for fabricating contacts to pillar structures in integrated circuits
- 专利标题（中）： 在集成电路中制造与柱结构接触的方法
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申请号： US11866455申请日： 2007-10-03
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公开(公告)号： US08008095B2公开(公告)日： 2011-08-30
- 发明人: Solomon Assefa , Gregory Costrini , Christopher Vincent Jahnes , Michael J. Rooks , Jonathan Zanhong Sun
- 申请人： Solomon Assefa , Gregory Costrini , Christopher Vincent Jahnes , Michael J. Rooks , Jonathan Zanhong Sun
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A pillar structure that is contacted by a vertical contact is formed in an integrated circuit. A hard mask is formed and utilized to pattern a least a portion of the pillar structure. The hard mask comprises carbon. Subsequently, the hard mask is removed. A conductive material is then deposited in a region previously occupied by the hard mask to form the vertical contact. The hard mask may, for example, comprise diamond-like carbon. The pillar structure may have a width or diameter less than about 100 nanometers.