发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11727981申请日： 2007-03-29
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公开(公告)号： US08008152B2公开(公告)日： 2011-08-30
- 发明人: Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
- 申请人： Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2006-112193 20060414
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.
公开/授权文献
- US20080014745A1 Method of manufacturing semiconductor device 公开/授权日：2008-01-17
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