发明授权
- 专利标题： Self-assembly process for memory array
- 专利标题（中）： 内存阵列的自组装过程
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申请号： US12285220申请日： 2008-09-30
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公开(公告)号： US08008213B2公开(公告)日： 2011-08-30
- 发明人: Li Xiao , Jingyan Zhang , Huicai Zhong
- 申请人： Li Xiao , Jingyan Zhang , Huicai Zhong
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： The Marbury Law Group, PLLC
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.
公开/授权文献
- US20100078618A1 Self-assembly process for memory array 公开/授权日：2010-04-01