发明授权
- 专利标题: Ion implantation apparatus and method of correcting deviation angle of ion beam
- 专利标题(中): 离子注入装置及校正离子束偏离角的方法
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申请号: US12305594申请日: 2007-06-22
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公开(公告)号: US08008630B2公开(公告)日: 2011-08-30
- 发明人: Takatoshi Yamashita
- 申请人: Takatoshi Yamashita
- 申请人地址: JP Kyoto
- 专利权人: Nissin Ion Equipment Co., Ltd.
- 当前专利权人: Nissin Ion Equipment Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Osha • Liang LLP
- 优先权: JP2006-175127 20060626; JP2007-133001 20070518
- 国际申请: PCT/JP2007/062578 WO 20070622
- 国际公布: WO2008/001685 WO 20080103
- 主分类号: G21K1/08
- IPC分类号: G21K1/08 ; H01J3/14 ; H01J3/26 ; H01J49/42 ; A61N5/00 ; G21G5/00
摘要:
To increase a transport efficiency of an ion beam by correcting Y-direction diffusion caused by the space charge effect of the ion beam between an ion beam deflector, which separates the ion beam and neutrons from each other, and a target. An ion implantation apparatus has a beam paralleling device that bends an ion beam scanned in an X direction by magnetic field to be parallel and draws a ribbon-shaped ion beam. The beam paralleling device serves also as an ion beam deflector that deflects the ion beam by magnetic field to separates neutrons from the ion beam. In the vicinity of an outlet of the beam paralleling device, there is provided an electric field lens having a plurality of electrodes opposed to each other in a Y direction with a space for passing the ion beam and narrowing the ion beam in the Y direction.
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