发明授权
- 专利标题: Semiconductor device having vertical electrodes structure
- 专利标题(中): 具有垂直电极结构的半导体器件
-
申请号: US11667735申请日: 2005-11-14
-
公开(公告)号: US08008749B2公开(公告)日: 2011-08-30
- 发明人: Masahiro Sugimoto , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima , Tetsu Kachi
- 申请人: Masahiro Sugimoto , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima , Tetsu Kachi
- 申请人地址: JP Toyota-shi, Aichi-ken
- 专利权人: Toyota Jidosha Kabushiki Kaisha
- 当前专利权人: Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址: JP Toyota-shi, Aichi-ken
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权: JP2004-330123 20041115
- 国际申请: PCT/JP2005/021195 WO 20051114
- 国际公布: WO2006/052025 WO 20060518
- 主分类号: H01L29/20
- IPC分类号: H01L29/20
摘要:
A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.
公开/授权文献
- US20080128862A1 Semiconductor Devices And Method Of Manufacturing Them 公开/授权日:2008-06-05