发明授权
US08009461B2 SRAM device, and SRAM device design structure, with adaptable access transistors
有权
SRAM器件和SRAM器件设计结构，具有适应性的存取晶体管
- 专利标题： SRAM device, and SRAM device design structure, with adaptable access transistors
- 专利标题（中）： SRAM器件和SRAM器件设计结构，具有适应性的存取晶体管
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申请号： US11969981申请日： 2008-01-07
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公开(公告)号： US08009461B2公开(公告)日： 2011-08-30
- 发明人: Xu Ouyang , Louis C. Hsu
- 申请人： Xu Ouyang , Louis C. Hsu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor device includes a SRAM having a pair of MCSFETs connected as access transistors (pass gates). A design structure embodied or stored in a machine readable medium includes a SRAM having two MCSFETs connected as access transistors.
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