Invention Grant
- Patent Title: Substrate for EUV mask blanks
- Patent Title (中): 基板用于EUV掩模空白
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Application No.: US12490833Application Date: 2009-06-24
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Publication No.: US08012653B2Publication Date: 2011-09-06
- Inventor: Akio Koike , Ken Ebihara
- Applicant: Akio Koike , Ken Ebihara
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-199543 20080801; JP2008-284444 20081105
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A substrate that is suitable for an EUV mask or an EUV mask blank and excellent in flatness, is provided.A substrate for an EUV mask blank, which is made of a silica glass containing from 1 to 12 mass % of TiO2, wherein the surface roughness (rms) in a surface quality area of the substrate is at most 2 nm, and the maximum variation (PV) of the stress in the surface quality area of the substrate is at most 0.2 MPa.
Public/Granted literature
- US20100028787A1 SUBSTRATE FOR EUV MASK BLANKS Public/Granted day:2010-02-04
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