发明授权
US08012819B2 Semiconductor device including gate stack formed on inclined surface and method of fabricating the same
有权
包括在倾斜表面上形成的栅叠层的半导体器件及其制造方法
- 专利标题： Semiconductor device including gate stack formed on inclined surface and method of fabricating the same
- 专利标题（中）： 包括在倾斜表面上形成的栅叠层的半导体器件及其制造方法
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申请号： US12654866申请日： 2010-01-07
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公开(公告)号： US08012819B2公开(公告)日： 2011-09-06
- 发明人: Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
- 申请人： Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0110122 20051117
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.
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