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发明授权
US08012839B2 Method for fabricating a semiconductor device having an epitaxial channel and transistor having same 有权
用于制造具有外延沟道的半导体器件的方法和具有其的晶体管

Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
摘要：
A transistor having an epitaxial channel and a method for fabricating a semiconductor device having an epitaxial channel, the method including forming a hardmask on a substrate and forming an opening in the hardmask. The opening is geometrically characterized by a long dimension and a short dimension, and the opening is arranged in a predetermined manner relative to the channel region of a transistor. An epitaxial material is formed in the opening that induces strain in substrate regions proximate to the epitaxial material. The epitaxial material is confined to the opening, such that an epitaxial channel is formed. A transistor is fabricated in proximity to the epitaxial channel, such that the strain induced in the substrate provides enhanced transistor performance. By confining the epitaxial material to a predefined channel in the substrate, plastic strain relaxation of the epitaxial material is minimized and a maximum amount of strain is induced in the substrate.
摘要（中）：

具有外延沟道的晶体管和用于制造具有外延沟道的半导体器件的方法，所述方法包括在衬底上形成硬掩模并在硬掩模中形成开口。 开口的几何特征在于长尺寸和短尺寸，并且开口以相对于晶体管的沟道区域的预定方式布置。 在开口中形成外延材料，其在靠近外延材料的衬底区域中引起应变。 外延材料限于开口，从而形成外延沟道。 在外延沟道附近制造晶体管，使得在衬底中感应的应变提供增强的晶体管性能。 通过将外延材料限制在衬底中的预定通道，外延材料的塑性应变弛豫被最小化，并且在衬底中引起最大量的应变。

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