发明授权
- 专利标题: CMOS input buffer circuit
- 专利标题(中): CMOS输入缓冲电路
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申请号: US12813031申请日: 2010-06-10
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公开(公告)号: US08013631B2公开(公告)日: 2011-09-06
- 发明人: Fumiyasu Utsunomiya
- 申请人: Fumiyasu Utsunomiya
- 申请人地址: JP
- 专利权人: Seiko Instruments Inc.
- 当前专利权人: Seiko Instruments Inc.
- 当前专利权人地址: JP
- 代理机构: Brinsk Hofer Gilson & Lione
- 优先权: JP2009-159128 20090703; JP2009-185083 20090807; JP2009-265455 20091120
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175 ; H03L5/00
摘要:
Provided is a complementary metal oxide semiconductor (CMOS) input buffer circuit that is capable of lower voltage operation with lower current consumption. The CMOS input buffer circuit includes: a depletion type NMOS transistor including a drain connected to a power supply terminal (VDD), and a gate connected to an output terminal; a PMOS transistor including a source connected to a source of the depletion type NMOS transistor, a drain connected to the output terminal, and a gate connected to an input terminal; and an NMOS transistor including a source connected to a reference terminal (GND), a gate connected to the input terminal, and a drain connected to the output terminal.
公开/授权文献
- US20110001513A1 CMOS INPUT BUFFER CIRCUIT 公开/授权日:2011-01-06
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