Invention Grant
- Patent Title: Photonic crystal waveguide inlet structure
- Patent Title (中): 光子晶体波导入口结构
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Application No.: US12391075Application Date: 2009-02-23
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Publication No.: US08014643B2Publication Date: 2011-09-06
- Inventor: Beom-Hoan O , Dong-Jin Lee
- Applicant: Beom-Hoan O , Dong-Jin Lee
- Applicant Address: KR Incheon
- Assignee: Inha-University Industry Partnership Institute
- Current Assignee: Inha-University Industry Partnership Institute
- Current Assignee Address: KR Incheon
- Agency: Nelson Mullins Riley & Scarborough LLP
- Agent EuiHoon Lee, Esq.
- Priority: KR10-2008-0122359 20081204
- Main IPC: G02B6/26
- IPC: G02B6/26

Abstract:
Disclosed herein is a photonic crystal waveguide inlet structure for improving coupling efficiency of a strip waveguide and a photonic crystal waveguide. The photonic crystal waveguide inlet structure includes an inlet region of the photonic crystal waveguide. The photonic crystal waveguide includes photonic crystals in which air holes are arranged in a triangle lattice shape in a dielectric, and a hybrid waveguide in which at least one of the air holes is removed, the hybrid waveguide spacing the inlet region apart from the strip waveguide.
Public/Granted literature
- US20100142893A1 PHOTONIC CRYSTAL WAVEGUIDE INLET STRUCTURE Public/Granted day:2010-06-10
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