Invention Grant
- Patent Title: Film bonding method, film bonding apparatus, and semiconductor device manufacturing method
- Patent Title (中): 膜接合法,膜接合装置和半导体器件制造方法
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Application No.: US11475998Application Date: 2006-06-28
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Publication No.: US08016973B2Publication Date: 2011-09-13
- Inventor: Yoshiaki Shinjo , Yuzo Shimobeppu , Kazuo Teshirogi , Kazuhiro Yoshimoto
- Applicant: Yoshiaki Shinjo , Yuzo Shimobeppu , Kazuo Teshirogi , Kazuhiro Yoshimoto
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2006-042135 20060220
- Main IPC: B29C65/16
- IPC: B29C65/16

Abstract:
A film bonding method of bonding a die bond film without causing any breakage. The die bond film is pressed against a wafer having a surface protective tape bonded thereto using a film-setting roller and a film-bonding roller, and a laser beam having a predetermined shape is irradiated to an area between the rollers. While rotationally moving the film-setting roller and the film-bonding roller, the laser beam is scanned on the wafer in accordance with their motion, and a portion of the die bond film, melted by the laser beam, is pressed against the wafer by the film-bonding roller following the film-setting roller to bond the die bond film to the wafer. Since the die bond film is bonded to the wafer by melting the same by the laser beam, even if the wafer is thin and reduced in its strength, it is possible to avoid the wafer from being damaged e.g. by thermal contraction of the surface protective tape.
Public/Granted literature
- US20070196588A1 Film bonding method, film bonding apparatus, and semiconductor device manufacturing method Public/Granted day:2007-08-23
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