Invention Grant
- Patent Title: Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations
- Patent Title (中): 具有磷和砷离子注入的NOR闪存的制造方法
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Application No.: US12562870Application Date: 2009-09-18
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Publication No.: US08017488B2Publication Date: 2011-09-13
- Inventor: Sheng-Da Liu , Yider Wu
- Applicant: Sheng-Da Liu , Yider Wu
- Applicant Address: unknown Chu-Pei
- Assignee: EON Silicon Solutions Inc.
- Current Assignee: EON Silicon Solutions Inc.
- Current Assignee Address: unknown Chu-Pei
- Agency: Schmeiser, Olsen & Watts LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations mainly implants both phosphorous and arsenic ions on a drain area of a transistor memory unit, and controls specific energy and dosage for the implantation to reduce the defects of a memory device and improve the yield rate of the NOR flash memory.
Public/Granted literature
- US20110070705A1 MANUFACTURING METHOD OF A NOR FLASH MEMORY WITH PHOSPHOROUS AND ARSENIC ION IMPLANTATIONS Public/Granted day:2011-03-24
Information query
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