Invention Grant
US08017933B2 Compositionally-graded quantum-well channels for semiconductor devices
有权
用于半导体器件的组成级分量子阱通道
- Patent Title: Compositionally-graded quantum-well channels for semiconductor devices
- Patent Title (中): 用于半导体器件的组成级分量子阱通道
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Application No.: US12164982Application Date: 2008-06-30
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Publication No.: US08017933B2Publication Date: 2011-09-13
- Inventor: Ravi Pillarisetty , Mantu K. Hudait , Marko Radosavljevic , Gilbert Dewey , Willy Rachmady , Titash Rakshit
- Applicant: Ravi Pillarisetty , Mantu K. Hudait , Marko Radosavljevic , Gilbert Dewey , Willy Rachmady , Titash Rakshit
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L31/072
- IPC: H01L31/072
Abstract:
A compositionally-graded quantum well channel for a semiconductor device is described. A semiconductor device includes a semiconductor hetero-structure disposed above a substrate and having a compositionally-graded quantum-well channel region. A gate electrode is disposed in the semiconductor hetero-structure, above the compositionally-graded quantum-well channel region. A pair of source and drain regions is disposed on either side of the gate electrode.
Public/Granted literature
- US20090321717A1 COMPOSITIONALLY-GRADED QUANTUM-WELL CHANNELS FOR SEMICONDUCTOR DEVICES Public/Granted day:2009-12-31
Information query
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