发明授权
- 专利标题： Nonvolatile semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
-
申请号： US12659703申请日： 2010-03-17
-
公开(公告)号： US08017989B2公开(公告)日： 2011-09-13
- 发明人: Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
- 申请人： Yoshio Ozawa , Ichiro Mizushima , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2007-167997 20070626
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface thereof, a surface of the insulating material is covered with the semiconductor layer, and a plurality of memory cells provided on the semiconductor layer, the memory cells includes a first dielectric film provided by covering the surface of the semiconductor layer, a plurality of charge storage layers provided above the insulating material and on the first dielectric film, a plurality of second dielectric films provided on the each charge storage layer, a plurality of conductive layers provided on the each second dielectric film, and an impurity diffusion layer formed partially or overall at least above the insulating material and inside the semiconductor layer and at least a portion of a bottom end thereof being provided by an upper surface of the insulating material.
公开/授权文献
信息查询
IPC分类:
