Invention Grant
- Patent Title: Package for high power density devices
- Patent Title (中): 高功率密度器件封装
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Application No.: US11641270Application Date: 2006-12-19
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Publication No.: US08018056B2Publication Date: 2011-09-13
- Inventor: Henning M. Hauenstein
- Applicant: Henning M. Hauenstein
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/04
- IPC: H01L23/04

Abstract:
A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
Public/Granted literature
- US20070138651A1 Package for high power density devices Public/Granted day:2007-06-21
Information query
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