发明授权
US08018164B2 Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
有权
等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源
- 专利标题： Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
- 专利标题（中）： 等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源
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申请号： US12129155申请日： 2008-05-29
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公开(公告)号： US08018164B2公开(公告)日： 2011-09-13
- 发明人: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- 申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： H01J7/24
- IPC分类号： H01J7/24
摘要：
Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
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