Invention Grant
US08018164B2 Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
有权
等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源
- Patent Title: Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
- Patent Title (中): 等离子体电抗器采用高速等离子体负载阻抗调谐，调谐不同的不匹配频率源
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Application No.: US12129155Application Date: 2008-05-29
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Publication No.: US08018164B2Publication Date: 2011-09-13
- Inventor: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: H01J7/24
- IPC: H01J7/24
Abstract:
Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.
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