发明授权
US08018769B2 Non-volatile memory with linear estimation of initial programming voltage
有权
具有初始编程电压线性估计的非易失性存储器
- 专利标题: Non-volatile memory with linear estimation of initial programming voltage
- 专利标题(中): 具有初始编程电压线性估计的非易失性存储器
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申请号: US12573405申请日: 2009-10-05
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公开(公告)号: US08018769B2公开(公告)日: 2011-09-13
- 发明人: Loc Tu , Charles Moana Hook , Yan Li
- 申请人: Loc Tu , Charles Moana Hook , Yan Li
- 申请人地址: US TX Plano
- 专利权人: Sandisk Technologies Inc.
- 当前专利权人: Sandisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
In a non-volatile memory, a selected page on a word line is successively programmed by a series of voltage pulses of a staircase waveform with verifications in between the pulses until the page is verified to a designated pattern. The programming voltage at the time the page is programmed verified will be used to estimate the initial value of a starting programming voltage for the page. The estimation is further refined by using the estimate from a first pass in a second pass. Also, when the test is over multiple blocks, sampling of word lines based on similar geometrical locations of the blocks can yield a starting programming voltage optimized for faster programming pages.
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