发明授权
- 专利标题: Memory write signaling and methods thereof
- 专利标题(中): 存储器写入信令及其方法
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申请号: US12875483申请日: 2010-09-03
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公开(公告)号: US08019958B2公开(公告)日: 2011-09-13
- 发明人: Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarre , David Nguyen
- 申请人: Richard M. Barth , Frederick A. Ware , Donald C. Stark , Craig E. Hampel , Paul G. Davis , Abhijit M. Abhyankar , James A. Gasbarre , David Nguyen
- 申请人地址: US CA Sunnyvale
- 专利权人: Rambus Inc.
- 当前专利权人: Rambus Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
In a method of controlling a memory device, the following is conveyed over a first set of interconnect resources: a first command that specifies activation of a row of memory cells; a second command that specifies a write operation, wherein write data is written to the row; a bit that specifies whether precharging occurs after the write data is written; and a code that specifies whether data mask information will be issued for the write operation. If the code specifies that the information will be issued, then the information, which specifies whether to selectively write portions of the write data, is conveyed over the first set of interconnect resources after conveying the code. The write data to be written in connection with the write operation is conveyed over a second set of interconnect resources that is separate from the first set of interconnect resources.
公开/授权文献
- US20100332719A1 Memory Write Signaling and Methods Thereof 公开/授权日:2010-12-30
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