发明授权
- 专利标题: Method for fabricating light emitting diode
- 专利标题(中): 制造发光二极管的方法
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申请号: US12584386申请日: 2009-09-03
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公开(公告)号: US08021902B2公开(公告)日: 2011-09-20
- 发明人: Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
- 申请人: Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
- 申请人地址: CN Beijing TW Tu-Cheng, New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW Tu-Cheng, New Taipei
- 代理机构: Altis Law Group, Inc.
- 优先权: CN200910105809 20090227
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.
公开/授权文献
- US20100221852A1 Method for fabricating light emitting diode 公开/授权日:2010-09-02