发明授权
- 专利标题： Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors
- 专利标题（中）： 铜铟镓硒化合物半导体的顺序多子层沉积的机器和工艺
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申请号： US12771590申请日： 2010-04-30
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公开(公告)号： US08021905B1公开(公告)日： 2011-09-20
- 发明人: Prem Nath , Venugopala R. Basava , Ajay Kumar Kalla , Peter Alex Shevchuk , Mohan S. Misra
- 申请人： Prem Nath , Venugopala R. Basava , Ajay Kumar Kalla , Peter Alex Shevchuk , Mohan S. Misra
- 申请人地址： US CO Thornton
- 专利权人： Ascent Solar Technologies, Inc.
- 当前专利权人： Ascent Solar Technologies, Inc.
- 当前专利权人地址： US CO Thornton
- 代理机构： Lathrop & Gage LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS.
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