发明授权
- 专利标题： Thin-film transistor display panel and method of fabricating the same
- 专利标题（中）： 薄膜晶体管显示面板及其制造方法
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申请号： US12499009申请日： 2009-07-07
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公开(公告)号： US08022411B2公开(公告)日： 2011-09-20
- 发明人: Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
- 申请人： Kap-Soo Yoon , Ki-Won Kim , Sung-Ryul Kim , Sung-Hoon Yang , Woo-Geun Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Innovation Counsel LLP
- 优先权： KR10-2008-0088842 20080909
- 主分类号： H01L51/52
- IPC分类号： H01L51/52
摘要：
Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.
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