发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12331670申请日: 2008-12-10
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公开(公告)号: US08022524B2公开(公告)日: 2011-09-20
- 发明人: Hitoshi Sato
- 申请人: Hitoshi Sato
- 申请人地址: JP Nagano-shi
- 专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人: Shinko Electric Industries Co., Ltd.
- 当前专利权人地址: JP Nagano-shi
- 代理机构: Rankin, Hill & Clark LLP
- 优先权: JP2007-323744 20071214
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/52
摘要:
A semiconductor device includes a wiring board having: plural stacked insulating layers; test pads and external connection pads which are disposed on a face of the plural stacked insulating layers located on the side opposite to that where another wiring board is connected; first wiring patterns which electrically connect internal connection pads with the test pads; and second wiring patterns which electrically connect semiconductor element mounting pads with the external connection pads. The external connection pads are placed on the inner side of the test pads.
公开/授权文献
- US20090152693A1 SEMICONDUCTOR DEVICE 公开/授权日:2009-06-18
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