Invention Grant
- Patent Title: Semiconductor device having improved metal wiring
- Patent Title (中): 具有改进的金属布线的半导体器件
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Application No.: US11543794Application Date: 2006-10-06
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Publication No.: US08022542B2Publication Date: 2011-09-20
- Inventor: Kazumi Saitou
- Applicant: Kazumi Saitou
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corp
- Current Assignee: Renesas Electronics Corp
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2005-294591 20051007
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor device includes a semiconductor substrate, an interlayer insulating film, a tungsten film, a first barrier metal film, a second barrier metal film and a metal wiring film. The interlayer insulating film is formed on the semiconductor substrate, and has an opening. The tungsten film is embedded in the opening. The first barrier metal film is formed on the tungsten film and excludes a Ti film. The second barrier metal film is formed on the first barrier metal film and is a Ti-containing film. The metal wiring film is formed on the second barrier metal film.
Public/Granted literature
- US20070080445A1 Semiconductor device having improved metal wiring Public/Granted day:2007-04-12
Information query
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