发明授权
US08022547B2 Non-volatile memory cells including small volume electrical contact regions
有权
包括小体积电接触区域的非易失性存储单元
- 专利标题： Non-volatile memory cells including small volume electrical contact regions
- 专利标题（中）： 包括小体积电接触区域的非易失性存储单元
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申请号： US12272871申请日： 2008-11-18
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公开(公告)号： US08022547B2公开(公告)日： 2011-09-20
- 发明人: Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- 申请人： Venugopalan Vaithyanathan , Wei Tian , Insik Jin
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps LLC
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L27/10 ; H01L29/74
摘要：
A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode.
公开/授权文献
- US20100123542A1 NANO-DIMENSIONAL NON-VOLATILE MEMORY CELLS 公开/授权日：2010-05-20
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