发明授权
- 专利标题： Semiconductor memory device, method for fabricating the same and semiconductor switching device
- 专利标题（中）： 半导体存储器件及其制造方法以及半导体开关器件
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申请号： US12209605申请日： 2008-09-12
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公开(公告)号： US08023309B2公开(公告)日： 2011-09-20
- 发明人: Hiroyuki Tanaka , Yasuhiro Shimada , Yukihiro Kaneko
- 申请人： Hiroyuki Tanaka , Yasuhiro Shimada , Yukihiro Kaneko
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2007-266919 20071012
- 主分类号： G11C11/22
- IPC分类号： G11C11/22
摘要：
A first electrode is formed on a stacked-layer film, which is formed of a ferroelectric layer and a semiconductor layer, at the ferroelectric layer and a plurality of second electrodes are formed on the stacked-layer film at the semiconductor layer side. Each of parts of the semiconductor layer located in regions in which the second electrodes are formed functions as a resistance modulation element (memory) using the polarization assist effect of the ferroelectric layer. Information (a low resistance state or a high resistance state) held in a memory is read by detecting a value of a current flowing in each part of the semiconductor layer. Information is written in a memory by inverting a polarization of the ferroelectric layer.
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