Invention Grant
US08023311B2 Resistive memory devices including selected reference memory cells operating responsive to read operations
有权
电阻式存储器件包括响应于读取操作而工作的选择的参考存储器单元
- Patent Title: Resistive memory devices including selected reference memory cells operating responsive to read operations
- Patent Title (中): 电阻式存储器件包括响应于读取操作而工作的选择的参考存储器单元
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Application No.: US12358936Application Date: 2009-01-23
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Publication No.: US08023311B2Publication Date: 2011-09-20
- Inventor: Hyun-Jo Kim , Kyung-Tae Nam , In-Gyu Baek , Se-Chung Oh , Jang-Eun Lee , Jun-Ho Jeong
- Applicant: Hyun-Jo Kim , Kyung-Tae Nam , In-Gyu Baek , Se-Chung Oh , Jang-Eun Lee , Jun-Ho Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2005-0124033 20051215
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A Resistance based Random Access Memory (ReRAM) can include a sense amplifier circuit that includes a first input coupled to a bit line of a reference cell in a first block of the ReRAM responsive to a read operation to a second block.
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