Invention Grant
- Patent Title: Ultrafine-grain-copper-base sputter targets
- Patent Title (中): 超细晶粒铜基溅射靶
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Application No.: US11019713Application Date: 2004-12-23
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Publication No.: US08025749B2Publication Date: 2011-09-27
- Inventor: Andrew C. Perry , Paul S. Gilman
- Applicant: Andrew C. Perry , Paul S. Gilman
- Applicant Address: US CT North Haven
- Assignee: Praxair S. T. Technology, Inc.
- Current Assignee: Praxair S. T. Technology, Inc.
- Current Assignee Address: US CT North Haven
- Agent Iurie A. Schwartz
- Main IPC: C21D6/04
- IPC: C21D6/04
Abstract:
The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.
Public/Granted literature
- US20050133125A1 Ultrafine-grain-copper-base sputter targets Public/Granted day:2005-06-23
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