发明授权
- 专利标题： Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device
- 专利标题（中）： 半导体基板的清洗装置及半导体装置的制造方法
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申请号： US11475995申请日： 2006-06-28
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公开(公告)号： US08026175B2公开(公告)日： 2011-09-27
- 发明人: Tadashi Oshima
- 申请人： Tadashi Oshima
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2006-091352 20060329
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
After a liquid chemical treatment is finished, in parallel with a washing away treatment and/or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.
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