发明授权
- 专利标题: Charged particle beam apparatus and control method therefor
- 专利标题(中): 带电粒子束装置及其控制方法
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申请号: US12142284申请日: 2008-06-19
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公开(公告)号: US08026482B2公开(公告)日: 2011-09-27
- 发明人: Muneyuki Fukuda , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
- 申请人: Muneyuki Fukuda , Hiromasa Yamanashi , Sayaka Tanimoto , Yasunari Souda , Osamu Nasu
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2007-162286 20070620; JP2008-109502 20080418
- 主分类号: G21K5/00
- IPC分类号: G21K5/00 ; G21K1/00
摘要:
Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.