发明授权
- 专利标题： Nonvolatile semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12434305申请日： 2009-05-01
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公开(公告)号： US08026546B2公开(公告)日： 2011-09-27
- 发明人: Takeshi Murata , Takeshi Kamigaichi
- 申请人： Takeshi Murata , Takeshi Kamigaichi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-123023 20080509
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.
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