发明授权
- 专利标题: Phase locked loop circuit, method of operating phase locked loop circuit and semiconductor memory device including phase locked loop circuit
- 专利标题(中): 锁相环电路,锁相环电路的操作方法和包括锁相环电路的半导体存储器件
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申请号: US12591399申请日: 2009-11-18
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公开(公告)号: US08026749B2公开(公告)日: 2011-09-27
- 发明人: Seungjun Bae , Young-Sik Kim , Sanghyup Kwak
- 申请人: Seungjun Bae , Young-Sik Kim , Sanghyup Kwak
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2008-0115197 20081119
- 主分类号: H03L7/06
- IPC分类号: H03L7/06
摘要:
A phase locked loop circuit includes a delay compensation circuit and a phase change circuit. The delay compensation circuit is adapted to generate a delay clock signal by delaying a phase of a first output clock signal by a second phase, the phase of the first output clock signal having a phase leading a phase of an input clock signal by a first phase, and the second phase corresponding to a delay compensation time greater than a period of the input clock signal and greater than the first phase. The phase change circuit is adapted to change the second phase to the first phase and to generate a feedback clock signal having a phase synchronized with the phase of the input clock signal in response to the first phase, wherein the first phase is a phase corresponding to a remainder time resulting from the delay compensation time being divided by the period of the input clock, and wherein the quotient is an integer.
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