发明授权
- 专利标题: Semiconductor device manufacturing method and semiconductor manufacturing apparatus
- 专利标题(中): 半导体器件制造方法和半导体制造装置
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申请号: US11992230申请日: 2005-09-20
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公开(公告)号: US08030182B2公开(公告)日: 2011-10-04
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori
- 申请人: Tadahiro Ohmi , Akinobu Teramoto , Hiroshi Akahori
- 申请人地址: JP Sendai-shi
- 专利权人: Tadahiro OHMI
- 当前专利权人: Tadahiro OHMI
- 当前专利权人地址: JP Sendai-shi
- 代理机构: Foley & Lardner LLP
- 国际申请: PCT/JP2005/017260 WO 20050920
- 国际公布: WO2007/034534 WO 20070329
- 主分类号: H01L21/461
- IPC分类号: H01L21/461 ; B08B7/04
摘要:
By hydrogen-terminating a semiconductor surface using a solution containing HF2− ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.